HEAVY-ION SPUTTERING YIELD OF SILICON

被引：64

作者：

ANDERSEN, HH ^{[1
]}

BAY, HL ^{[1
]}

机构：

[1] UNIV AARHUS,INST PHYS,DK-8000 AARHUS,DENMARK

来源：

关键词：

D O I：

10.1063/1.321889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1919 / 1921

页数：3

共 19 条

[11] HVELPLUND P, TO BE PUBLISHED
[12] LINDHARD J, 1963, VIDENSK SELSK MAT FY, V33
[13] SIDENIUS G, 1974, VIDENSK SELSK MAT FY, V39
[14] SIGMUND P, 1972, REV ROUM PHYS, V17, P1079
[15] SIGMUND P, 1972, REV ROUM PHYS, V17, P969
[16] SIGMUND P, 1972, REV ROUM PHYS, V17, P823
[17] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS
SIGMUND, P
[J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +
[18] SPUTTERING OF SILICON AND GERMANIUM BY MIDDLE-ENERGY HEAVY-IONS
SOMMERFELDT, H
MASHKOVA, ES
MOLCHANOV, VA
[J]. PHYSICS LETTERS A, 1972, A 38 (04) : 237 - +
[19] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS
SOUTHERN, AL
ROBINSON, MT
WILLIS, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 153 - &