STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES

被引：284

作者：

PEARSALL, TP ^{[1
]}

BEVK, J ^{[1
]}

FELDMAN, LC ^{[1
]}

BONAR, JM ^{[1
]}

MANNAERTS, JP ^{[1
]}

OURMAZD, A ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.58.729

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：729 / 732

页数：4

共 19 条

[1]

ABSTREITER G, 1985, PHYS REV LETT, V54, P2331

[2]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[3] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J].

BEAN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :540-545

[4] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J].

BEVK, J ;

MANNAERTS, JP ;

FELDMAN, LC ;

DAVIDSON, BA ;

OURMAZD, A .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :286-288

[5]

CARDONA M, 1969, SOLID STATE PHYSIC S, V11

[6] TRAPPING OF OXYGEN AT HOMOEPITAXIAL SI-SI INTERFACES [J].

HULL, R ;

BEAN, JC ;

GIBSON, JM ;

JOY, DC ;

TWIGG, ME .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1287-1289

[7] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIBASHI, A ;

MORI, Y ;

ITABASHI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2691-2695

[8]

Jackson S. A., 1986, MATERIALS RES SOC S, V56, P365, DOI [10.1557/PROC-56-365, DOI 10.1557/PROC-56-365]

[9]

Kasper E., 1986, MAT RES SOC S P, V56, P347

[10] THEORY OF SILICON SUPER-LATTICES - ELECTRONIC-STRUCTURE AND ENHANCED MOBILITY [J].

MORIARTY, JA ;

KRISHNAMURTHY, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1892-1902

← 1 2 →