TRAPPING OF OXYGEN AT HOMOEPITAXIAL SI-SI INTERFACES

被引：14

作者：

HULL, R ^{[1
]}

BEAN, JC ^{[1
]}

GIBSON, JM ^{[1
]}

JOY, DC ^{[1
]}

TWIGG, ME ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1287 / 1289

页数：3

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[3] Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129
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