EPITAXIAL-GROWTH OF GEXSI1-X ON SI - A DIRECT MONTE-CARLO SIMULATION

被引：23

作者：

KOBAYASHI, A

DASSARMA, S

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.37.1039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1039 / 1042

页数：4

共 21 条

[1] COMPUTER SIMULATION OF VAPOR DEPOSITION ON 2-DIMENSIONAL LATTICES
ABRAHAM, FF
WHITE, GM
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1841 - &
[2] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
ABSTREITER, G
BRUGGER, H
WOLF, T
JORKE, H
HERZOG, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
[3] [Anonymous], ELECTRONIC STRUCTURE
[4] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[5] BRUGGER H, 1987, IN PRESS 3RD P INT C
[6] STRUCTURAL TRANSITIONS IN EPITAXIAL OVERLAYERS
BRUINSMA, R
ZANGWILL, A
[J]. JOURNAL DE PHYSIQUE, 1986, 47 (12): : 2055 - 2073
[7] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH
CLARKE, S
VVEDENSKY, DD
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238
[8] ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH
DASSARMA, S
PAIK, SM
KHOR, KE
KOBAYASHI, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1179 - 1183
[9] ATOMISTIC SIMULATION OF SILICON BEAM DEPOSITION
DODSON, BW
[J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1068 - 1074
[10] MONTE-CARLO SIMULATION OF DYNAMIC UNIAXIAL STRAIN IN TWO-DIMENSIONAL LENNARD-JONES LATTICES
DODSON, BW
TAYLOR, PA
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1679 - 1685