ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH

被引：28

作者：

DASSARMA, S

PAIK, SM

KHOR, KE

KOBAYASHI, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1179 / 1183

页数：5

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