THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES

被引：41

作者：

JOYCE, BA ^{[1
]}

DOBSON, PJ ^{[1
]}

NEAVE, JH ^{[1
]}

ZHANG, J ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2AZ,ENGLAND

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90378-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1 / 9

页数：9

共 24 条

[1] MULTINUCLEAR GROWTH OF DISLOCATION-FREE PLANES IN ELECTROCRYSTALLIZATION
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[2] POSITIONS OF THE SUB-BAND MINIMA IN GAAS-(ALGA)AS QUANTUM WELL HETEROSTRUCTURES
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[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) : 231 - 235
[3] DOBSON PJ, UNPUB
[4] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
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MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
[5] HE SCATTERING STUDY OF THE NUCLEATION AND GROWTH OF CU(100) FROM ITS VAPOR
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IBANEZ, J
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[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2551 - 2553
[6] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM
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HENZLER, M
[J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187
[7] ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES
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NEAVE, JH
DOBSON, PJ
LARSEN, PK
[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 814 - 819
[8] DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES
LARSEN, PK
DOBSON, PJ
NEAVE, JH
JOYCE, BA
BOLGER, B
ZHANG, J
[J]. SURFACE SCIENCE, 1986, 169 (01) : 176 - 196
[9] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES
LENT, CS
COHEN, PI
[J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154
[10] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
LEWIS, BF
LEE, TC
GRUNTHANER, FJ
MADHUKAR, A
FERNANDEZ, R
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424

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