EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM

被引:120
作者
GRONWALD, KD
HENZLER, M
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D O I
10.1016/0039-6028(82)90498-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:180 / 187
页数:8
相关论文
共 9 条
[1]  
GRONWALD KD, UNPUB
[2]   LEED-INVESTIGATIONS AND WORK-FUNCTION MEASUREMENTS OF THE 1ST STAGES OF EPITAXY OF TUNGSTEN ON TUNGSTEN(110) [J].
HAHN, P ;
CLABES, J ;
HENZLER, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2079-2084
[3]  
Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421
[4]   QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1978, 73 (01) :240-251
[5]  
HENZLER M, 1979, ADV SOLID STATE PHYS, V19, P193
[6]  
HENZLER M, UNPUB APPL SURFACE S
[7]   LOW-ENERGY ELECTRON DIFFRACTION FROM IMPERFECT STRUCTURES [J].
HOUSTON, JE ;
PARK, RL .
SURFACE SCIENCE, 1970, 21 (02) :209-&
[8]   THE RESOLVING POWER OF A LOW-ENERGY ELECTRON DIFFRACTOMETER AND THE ANALYSIS OF SURFACE-DEFECTS [J].
LU, TM ;
LAGALLY, MG .
SURFACE SCIENCE, 1980, 99 (03) :695-713
[9]  
van Hove M.A., 1979, SURFACE CRYSTALLOGRA