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QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES
被引:131
作者
:
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Institut B für Experimentalphysik, Technische Universität, Hannover
HENZLER, M
机构
:
[1]
Institut B für Experimentalphysik, Technische Universität, Hannover
来源
:
SURFACE SCIENCE
|
1978年
/ 73卷
/ 01期
关键词
:
D O I
:
10.1016/0039-6028(78)90499-5
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
LEED spot profiles are evaluated to determine random distributed steps at interfaces and surfaces. It is shown that strictly kinematical evaluations are sufficient to provide data on step atom density and terrace width distribution. Experimental results for samples prepared in different ways show the wide range of applications. © 1978.
引用
收藏
页码:240 / 251
页数:12
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SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM
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[J].
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[2]
BESOCKE K, 1973, PHYS REV B, V8, P4597, DOI 10.1103/PhysRevB.8.4597
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ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS
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[J].
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ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
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[J].
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[J].
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1970,
22
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: 12
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←
1
2
→
共 20 条
[1]
SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM
ABBINK, HC
论文数:
0
引用数:
0
h-index:
0
ABBINK, HC
BROUDY, RM
论文数:
0
引用数:
0
h-index:
0
BROUDY, RM
MCCARTHY, GP
论文数:
0
引用数:
0
h-index:
0
MCCARTHY, GP
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
: 4673
-
&
[2]
BESOCKE K, 1973, PHYS REV B, V8, P4597, DOI 10.1103/PhysRevB.8.4597
[3]
ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
SURFACE SCIENCE,
1973,
34
(03)
: 717
-
731
[4]
HAHN PB, UNPUBLISHED
[5]
ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
HARTSTEIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HARTSTEIN, A
NING, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
NING, TH
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FOWLER, AB
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 178
-
181
[6]
STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV CLAUSTHAL, PHYS INST, CLAUSTHAL, FED REP GER
TECH UNIV CLAUSTHAL, PHYS INST, CLAUSTHAL, FED REP GER
HENZLER, M
CLABES, J
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV CLAUSTHAL, PHYS INST, CLAUSTHAL, FED REP GER
TECH UNIV CLAUSTHAL, PHYS INST, CLAUSTHAL, FED REP GER
CLABES, J
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
: 389
-
396
[7]
ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,PHYS INST 2,AACHEN,WEST GERMANY
HENZLER, M
[J].
SURFACE SCIENCE,
1973,
36
(01)
: 109
-
122
[8]
LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1970,
19
(01)
: 159
-
&
[9]
TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1970,
22
(01)
: 12
-
&
[10]
HENZLER M, 1977, ELECTRON SPECTROSCOP, V4
←
1
2
→