ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS

被引：111

作者：

HARTSTEIN, A ^{[1
]}

NING, TH ^{[1
]}

FOWLER, AB ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90131-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：178 / 181

页数：4

共 14 条

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[5] HIGH-TEMPERATURE VARIABLE RANGE HOPPING CONDUCTIVITY IN SILICON INVERSION LAYERS [J].

HARTSTEIN, A ;

FOWLER, AB .

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[6]

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[7]

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[8] EFFECT OF THIN OXIDE FILM ON BREAKDOWN VOLTAGE OF SILICON N+P JUNCTION [J].

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HANETA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) :367-368

[9]

MATSUMOTO Y, 1974, 2ND P INT C SOL SURF

[10]

NING TH, 1973, B AM PHYSICAL SOC, V18, P344

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