EFFECT OF THIN OXIDE FILM ON BREAKDOWN VOLTAGE OF SILICON N+P JUNCTION

被引：49

作者：

MATSUMOTO, K ^{[1
]}

HANETA, Y ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, IC DIV, KAWASAKI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 02期

关键词：

D O I：

10.1143/JJAP.13.367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：367 / 368

页数：2

相关论文

共 3 条

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[2] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

GROVE, AS ;

LEISTIKO, O ;

HOOPER, WW .

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HARA, H ;

OKAMOTO, Y ;

OHNUMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) :1103-+