THEORY OF CARRIER-DENSITY FLUCTUATIONS IN AN IGFET NEAR THRESHOLD

被引：72

作者：

BREWS, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2181 / 2192

页数：12

共 18 条

[1] SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2306-&

[2] CARRIER-DENSITY FLUCTUATIONS AND IGFET MOBILITY NEAR THRESHOLD [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2193-2203

[3] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J].

CHEN, JTC ;

MULLER, RS .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :828-834

[4] QUANTUM THEORY OF TRANSPORT IN NARROW CHANNELS [J].

DUKE, CB .

PHYSICAL REVIEW, 1968, 168 (03) :816-+

[5] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[6]

GREENE RF, 1969, MOLECULAR PROCESSES, P249

[7] SCATTERING MECHANISMS IN INVERSION CHANNELS OF MIS STRUCTURES ON SILICON [J].

GUZEV, AA ;

KURISHEV, GL ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :41-50

[8] EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS [J].

HERRING, C .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (11) :1939-1953

[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[10] EFFECTS OF INHOMOGENEITIES OF SURFACE-OXIDE CHARGES ON ELECTRON-ENERGY LEVELS IN A SEMICONDUCTOR SURFACE-INVERSION LAYER [J].

NING, TH ;

SAH, CT .

PHYSICAL REVIEW B, 1974, 9 (02) :527-535

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