SCATTERING MECHANISMS IN INVERSION CHANNELS OF MIS STRUCTURES ON SILICON

被引：29

作者：

GUZEV, AA ^{[1
]}

KURISHEV, GL ^{[1
]}

SINITSA, SP ^{[1
]}

机构：

[1] ACAD SCI USSR,INST SEMICONDUCTOR PHYS,SIBIRIAN BRANCH,NOVOSIBIRSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 01期

关键词：

D O I：

10.1002/pssa.2210140103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：41 / 50

页数：10

共 23 条

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KAWAJI, S
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NAKAMURA, K
[J]. SURFACE SCIENCE, 1971, 24 (02) : 659 - &
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[8] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
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FOWLER, AB
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
[9] Guzev A. A., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2043
[10] GUZEV AA, 1971, KONFERENTSII VOPROSA