ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH

被引：296

作者：

CLARKE, S

VVEDENSKY, DD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.58.2235

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：2235 / 2238

页数：4

相关论文

共 15 条

[1] CLARKE SW, IN PRESS
[2] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
GHAISAS, SV
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
[3] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY
GHAISAS, SV
MADHUKAR, A
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069
[4] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421
[5] QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES
HENZLER, M
[J]. SURFACE SCIENCE, 1978, 73 (01) : 240 - 251
[6] JOYCE BA, COMMUNICATION
[7] FAR FROM EQUILIBRIUM VAPOR-PHASE GROWTH OF LATTICE MATCHED III-V COMPOUND SEMICONDUCTOR INTERFACES - SOME BASIC CONCEPTS AND MONTE-CARLO COMPUTER-SIMULATIONS
MADHUKAR, A
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 344 - 374
[8] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY
MADHUKAR, A
GHAISAS, SV
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 247 - 249
[9] CRYSTALLINE SEMICONDUCTOR HETEROSTRUCTURES
NARAYANAMURTI, V
[J]. PHYSICS TODAY, 1984, 37 (10) : 24 - 32
[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS
NEAVE, JH
DOBSON, PJ
JOYCE, BA
ZHANG, J
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102