N-TYPE AND P-TYPE INPLANE GATED FIELD-EFFECT TRANSISTORS DIRECTLY WRITTEN ON A SEMIINSULATING GAAS SUBSTRATE

被引：15

作者：

HIRAYAMA, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type in-plane gated field effect transistor where the semi-insulating substrate itself is used as a gate insulator region is proposed. n- and p-type in-plane gated field effect transistors are fabricated on a semi-insulating GaAs substrate by focused ion beam scanning of Si++ and Be++, respectively. These in-plane gated field effect transistors are found to operate well at room temperature.

引用

页码：1667 / 1669

页数：3

共 4 条

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[3] QUANTIZED RESISTANCE IN INPLANE GATED NARROW CONSTRICTION FABRICATED BY WET ETCHING [J].

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[4] IN-PLANE-GATED QUANTUM WIRE TRANSISTOR FABRICATED WITH DIRECTLY WRITTEN FOCUSED ION-BEAMS [J].

WIECK, AD ;

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APPLIED PHYSICS LETTERS, 1990, 56 (10) :928-930

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