共 9 条
- [1] PD-NI-SI-BE-B LIQUID-METAL ION-SOURCE FOR MASKLESS ION-IMPLANTATION[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L165 - L166ARIMOTO, HTAKAMORI, AMIYAUCHI, EHASHIMOTO, H
- [2] FORMATION OF SUB-MICRON ISOLATION IN GAAS BY IMPLANTING A FOCUSED BORON ION-BEAM EMITTED FROM A PD-NI-SI-BE-B LM ION-SOURCE[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 54 - 57ARIMOTO, HTAKAMORI, AMIYAUCHI, EHASHIMOTO, H
- [3] HIGH-RESOLUTION PATTERNING OF SILICON BY SELECTIVE GALLIUM DOPING[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1059 - 1061BERRY, ILCAVIGLIA, AL
- [4] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2212 - 2216DANSAS, P
- [5] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07): : L516 - L518HIRAYAMA, YSUZUKI, YTARUCHA, SOKAMOTO, H
- [6] HIGH-RESOLUTION SPUTTERING USING A FOCUSED ION-BEAM[J]. THIN SOLID FILMS, 1982, 92 (1-2) : 165 - 169KUBENA, RLSELIGER, RLSTEVENS, EH
- [7] SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1113 - 1116MIYAUCHI, EARIMOTO, HHASHIMOTO, HUTSUMI, T
- [8] CHARACTERISTICS OF SUB-MICRON PATTERNS FABRICATED BY GALLIUM FOCUSED-ION-BEAM SPUTTERING[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) : 159 - 160MORIMOTO, HSASAKI, YWATAKABE, YKATO, T
- [9] RAMARCHE PH, 1983, J VAC SCI TECHNOL B, V1, P1056