HIGH-RESOLUTION PATTERNING OF SILICON BY SELECTIVE GALLIUM DOPING

[1] MONTE-CARLO SIMULATION OF ION-BEAM PENETRATION IN SOLIDS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4): : 223 - 233

[2] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[3] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 401 - &

[4] RANGES AND RANGE THEORIES [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 57 - 71

[5] VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1979, 9 : 373 - 403

[6] STUDY OF THE ETCH-STOP MECHANISM IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2051 - 2059

[7] SILICON AS A MECHANICAL MATERIAL [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (05) : 420 - 457

[8] PRICE JB, 1973, SEMICONDUCTOR SILICO

[9] STENGL G, 1979, J VAC SCI TECHNOL, V16, P1883, DOI 10.1116/1.570319

[1] MONTE-CARLO SIMULATION OF ION-BEAM PENETRATION IN SOLIDS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4): : 223 - 233

[2] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[3] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 401 - &

[4] RANGES AND RANGE THEORIES [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 57 - 71

[5] VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1979, 9 : 373 - 403

[6] STUDY OF THE ETCH-STOP MECHANISM IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2051 - 2059

[7] SILICON AS A MECHANICAL MATERIAL [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (05) : 420 - 457

[8] PRICE JB, 1973, SEMICONDUCTOR SILICO

[9] STENGL G, 1979, J VAC SCI TECHNOL, V16, P1883, DOI 10.1116/1.570319