VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS

被引：187

作者：

KENDALL, DL ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75222

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1979年 / 9卷

关键词：

D O I：

10.1146/annurev.ms.09.080179.002105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：373 / 403

页数：31

共 59 条

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