FORMATION OF SUB-MICRON ISOLATION IN GAAS BY IMPLANTING A FOCUSED BORON ION-BEAM EMITTED FROM A PD-NI-SI-BE-B LM ION-SOURCE

被引：13

作者：

ARIMOTO, H

TAKAMORI, A

MIYAUCHI, E

HASHIMOTO, H

机构：

[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：54 / 57

页数：4

共 15 条

[1] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS
FURUKAWA, S
ISHIWARA, H
MATSUMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +
[2] LIQUID-METAL ALLOY ION SOURCES FOR B, SB, AND SI
GAMO, K
UKEGAWA, T
INOMOTO, Y
OCHIAI, Y
NAMBA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1182 - 1185
[3] FIELD-EMISSION LIQUID-METAL ION-SOURCE AND TRIODE ION GUN
KOMURO, M
KAWAKATSU, H
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2642 - 2645
[4] FET FABRICATION USING MASKLESS ION-IMPLANTATION
KUBENA, RL
ANDERSON, CL
SELIGER, RL
JULLENS, RA
STEVENS, EH
LAGNADO, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 916 - 920
[5] COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS
MARTIN, GM
SECORDEL, P
VENGER, C
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8706 - 8715
[6] SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE
MIYAUCHI, E
ARIMOTO, H
HASHIMOTO, H
UTSUMI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1113 - 1116
[7] LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM
MIYAUCHI, E
ARIMOTO, H
BAMBA, Y
TAKAMORI, A
HASHIMOTO, H
UTSUMI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L423 - L425
[8] Muller E W, 1969, FIELD ION MICROSCOPY
[9] NAMBA S, 1983, P INT ION ENG C, V111, P1533
[10] OKUNUKI M, 1982, 6TH P S ISIAT, P71