COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS

[1] BERTH M, 1977, TECH DIG IEDM, P201

[2] BLOOD P, 1981, I PHYS C SER, V56, P251

[3] ERMAN M, UNPUB

[4] HOPKINS CG, 1980, APPL PHYS LETT, V39, P989

[5] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026

[6] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[7] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1839 - 1845

[8] Lang D. V., 1977, I PHYS C SER, V31, P70

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[10] LOUALICHE S, COMMUNICATION

[1] BERTH M, 1977, TECH DIG IEDM, P201

[2] BLOOD P, 1981, I PHYS C SER, V56, P251

[3] ERMAN M, UNPUB

[4] HOPKINS CG, 1980, APPL PHYS LETT, V39, P989

[5] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026

[6] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[7] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1839 - 1845

[8] Lang D. V., 1977, I PHYS C SER, V31, P70

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[10] LOUALICHE S, COMMUNICATION