LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM

被引：25

作者：

MIYAUCHI, E

ARIMOTO, H

BAMBA, Y

TAKAMORI, A

HASHIMOTO, H

UTSUMI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L423 / L425

页数：3

共 8 条

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[2] GAMO K, 1982, 10TH P INT C EL ION, P461
[3] FET FABRICATION USING MASKLESS ION-IMPLANTATION
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[5] A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS
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UTSUMI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L287 - L288
[6] LATERAL SPREAD OF P+ IONS IMPLANTED IN SILICON THROUGH THE SIO2 MASK WINDOW
SAKURAI, T
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HASHIMOTO, H
FURUYA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1287 - 1290
[7] MONTE-CARLO SIMULATION OF DEPTH AND LATERAL PROFILES OF BORON ATOMS IMPLANTED IN POLYCRYSTALLINE SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1745 - 1747
[8] SHIOKAWA T, 1983, 14TH P S ION IMPL SU, P173