THEORETICAL CONSIDERATIONS IN LATERAL DAMAGE DISTRIBUTION FORMED BY ION-IMPLANTATION

被引：12

作者：

MATSUMURA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,FAC COORDINATED SCI,DEPT ELECTR & SYST,YOKOHAMA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.14.1783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1783 / 1790

页数：8

共 12 条

[1] LATERAL SPREAD OF BORON IONS IMPLANTED IN SILICON
AKASAKA, Y
KAWAZU, S
HORIE, K
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 128 - &
[2] BOTTIGER J, 1973, 3RD P INT C ION IMPL, P599
[3] BRICE DK, 1971, 1ST P INT C ION IMPL, P101
[4] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
FOYT, AG
LINDLEY, WT
WOLFE, CM
DONNELLY, JP
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
[5] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS
FURUKAWA, S
ISHIWARA, H
MATSUMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +
[6] FURUKAWA S, 1973, APPL PHYS LETT, V11, P97
[7] FURUKAWA S, 1971, JPN J APPL PHYS S, V40, P3
[8] FURUKAWA S, 1970, 2ND P C SOL STAT DEV
[9] ION-IMPLANTED FET FOR POWER APPLICATIONS
LECROSNIER, DP
PELOUS, GP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 113 - 118
[10] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33