A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS

被引：16

作者：

MIYAUCHI, E

ARIMOTO, H

HASHIMOTO, H

FURUYA, T

UTSUMI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 05期

关键词：

D O I：

10.1143/JJAP.22.L287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L287 / L288

页数：2

共 6 条

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[2] FIELD-EMISSION LIQUID-METAL ION-SOURCE AND TRIODE ION GUN
KOMURO, M
KAWAKATSU, H
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2642 - 2645
[3] FET FABRICATION USING MASKLESS ION-IMPLANTATION
KUBENA, RL
ANDERSON, CL
SELIGER, RL
JULLENS, RA
STEVENS, EH
LAGNADO, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 916 - 920
[4] MIYAUCHI E, 1983, JPN J APPL PHYS 2, V22, pL225
[5] SHIOKAWA T, 1983, 14TH P S ION IMPL SU, P173
[6] A MASS-SEPARATING FOCUSED-ION-BEAM SYSTEM FOR MASKLESS ION-IMPLANTATION
WANG, V
WARD, JW
SELIGER, RL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1158 - 1163