PD-NI-SI-BE-B LIQUID-METAL ION-SOURCE FOR MASKLESS ION-IMPLANTATION

被引：16

作者：

ARIMOTO, H

TAKAMORI, A

MIYAUCHI, E

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.L165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L165 / L166

页数：2

共 15 条

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[2] KOMURO M, 1981, J APPL PHYS, V62, P2642
[3] FET FABRICATION USING MASKLESS ION-IMPLANTATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 916 - 920
[4] COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8706 - 8715
[5] MIYAUCHI E, 1983, JPN J APPL PHYS 2, V22, pL225
[6] LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM
MIYAUCHI, E
ARIMOTO, H
BAMBA, Y
TAKAMORI, A
HASHIMOTO, H
UTSUMI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L423 - L425
[7] A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS
MIYAUCHI, E
ARIMOTO, H
HASHIMOTO, H
FURUYA, T
UTSUMI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L287 - L288
[8] Muller E W, 1969, FIELD ION MICROSCOPY
[9] NAMBA S, P INT ION ENG C ISIA, V3, P1533
[10] OKUNUKI M, 1982, 6TH P S ISIAT, P71