EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING

被引：33

作者：

DANSAS, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

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D O I：

10.1063/1.335963

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2212 / 2216

页数：5

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