HOT-CARRIER AND HOT PHONON EFFECTS ON HIGH-SPEED QUANTUM-WELL LASERS

被引：30

作者：

TSAI, CY ^{[1
]}

EASTMAN, LF ^{[1
]}

LO, YH ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a theoretical model to analyze the hot carrier and hot phonon effect on the modulation response of semiconductor quantum well lasers. We find that the carrier heating strongly depends on the energy relaxation time of carriers and the lifetime of longitudinal-optic (LO) phonons. Furthermore, the carrier heating will significantly decrease the differential gain and increase the nonlinear gain coefficient and thus reduce the modulation bandwidth. From the numerical result, we demonstrate the bottleneck effect of the hot LO phonons on the modulation response of quantum well lasers. This implies that reducing the lifetime of LO phonons, for example, by doping in the quantum well, will most effectively decrease the carrier temperature and thus improve the modulation bandwidth.

引用

页码：3408 / 3410

页数：3

共 16 条

[1] SPECTRAL HOLE-BURNING AND GAIN SATURATION IN SEMICONDUCTOR-LASERS - STRONG-SIGNAL THEORY [J].