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HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE

被引：126
作者：
BOWERS, JE
机构：
[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 01期
关键词：
DIRECT CURRENT MODULATION - LASER INTENSITY AND FREQUENCY - LONGITUDINAL MODE LASER - PEAK FREQUENCY - RATE EQUATION;
D O I：
10.1016/0038-1101(87)90023-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design of semiconductor lasers for efficient response to direct current modulation at microwave and millimeter wave frequencies is described. A rate equation analysis is used to relate the effect of current modulation on laser intensity and frequency. This analysis is also used to relate the 0, 3 and 6 db frequencies to the peak frequency and to predict the maximum bandwidth obtainable in a single longitudinal mode laser. The design of structures and packaging for millimeter wave bandwidths is described.
引用
收藏
页码：1 / 11
页数：11
相关论文
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