HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE

被引：126

作者：

BOWERS, JE

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 01期

关键词：

DIRECT CURRENT MODULATION - LASER INTENSITY AND FREQUENCY - LONGITUDINAL MODE LASER - PEAK FREQUENCY - RATE EQUATION;

D O I：

10.1016/0038-1101(87)90023-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design of semiconductor lasers for efficient response to direct current modulation at microwave and millimeter wave frequencies is described. A rate equation analysis is used to relate the effect of current modulation on laser intensity and frequency. This analysis is also used to relate the 0, 3 and 6 db frequencies to the peak frequency and to predict the maximum bandwidth obtainable in a single longitudinal mode laser. The design of structures and packaging for millimeter wave bandwidths is described.

引用

页码：1 / 11

页数：11

共 69 条

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