DETAILED CALCULATIONS OF TRANSIENT EFFECTS IN SEMICONDUCTOR INJECTION-LASERS

被引：5

作者：

ADAMS, MJ

THOMAS, B

机构：

[1] UNIV SOUTHAMPTON, DEPT ELECTR, SOUTHAMPTON SO9 5NH, HAMPSHIRE, ENGLAND

[2] UWIST, DEPT APPL PHYS, CARDIFF CF1 3NU, WALES

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：580 / 585

页数：6

共 23 条

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FENNER GE, 1969, Patent No. 3478280

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[8] THEORETICAL CONSIDERATIONS OF TIME DELAYS IN SEMICONDUCTOR LASERS [J].

GRUNDORFER, S ;

ADAMS, MJ .

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[9] H-PULSING - TRANSIENT EFFECT IN GAAS-GAXAL1-XAS INJECTION LASERS [J].

GRUNDORFER, S ;

ADAMS, MJ ;

THOMAS, B .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :532-537

[10] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J].

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