H-PULSING - TRANSIENT EFFECT IN GAAS-GAXAL1-XAS INJECTION LASERS

被引：12

作者：

GRUNDORFER, S

ADAMS, MJ

THOMAS, B

机构：

[1] UNIV VIENNA, LUDWIG BOLTZMANN INST FESTKORPER PHYS, STRUDLHOFG 4, A-1090 VIENNA, AUSTRIA

[2] ELECTRO OPTICS GRP, PLESSEY RADAR, COWES, ISLE WIGHT, ENGLAND

[3] UNIV WALES, INST SCI & TECHNOL, DEPT APPL PHYS & ELECTR, CARDIFF, WALES

[4] UNIV VIENNA, INST ANGEWANDT PHYS, STRUDLHOFG 4, A-1090 VIENNA, AUSTRIA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：532 / 537

页数：6

共 23 条

[1]

Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2]

Adams M. J., 1970, Physica Status Solidi A, V1, P143, DOI 10.1002/pssa.19700010117

[3] TIME DELAYS AND Q-SWITCHING IN HOMOSTRUCTURE AND HETEROSTRUCTURE INJECTION LASERS [J].

ADAMS, MJ ;

GRUNDORFER, S ;

THOMAS, B ;

DAVIES, CFL ;

MISTRY, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :328-337

[4] ELECTROMAGNETIC THEORY OF HETEROSTRUCTURE INJECTION LASERS [J].

ADAMS, MJ ;

CROSS, M .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :865-+

[5]

ADAMS MJ, 1969, BRIT J APPL PHYS, V2, P1549

[6] MODE CONFINEMENT AND GAIN IN JUNCTION LASERS [J].

ANDERSON, WW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1965, QE 1 (06) :228-+

[7] DYNAMICS OF INJECTION LASERS [J].

BASOV, NG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) :855-+

[8] EFFECTS OF DOPING AND FREE CARRIERS ON REFRACTIVE-INDEX OF DIRECT-GAP SEMICONDUCTORS [J].

CROSS, M ;

ADAMS, MJ .

OPTO-ELECTRONICS, 1974, 6 (03) :199-216

[9] NEW THEORY OF INTERNAL Q-SWITCHING IN SEMICONDUCTOR LASERS [J].

GRUNDORFER, S ;

ADAMS, MJ ;

THOMAS, B .

ELECTRONICS LETTERS, 1974, 10 (17) :354-356

[10] THEORETICAL CONSIDERATIONS OF TIME DELAYS IN SEMICONDUCTOR LASERS [J].

GRUNDORFER, S ;

ADAMS, MJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (08) :814-819

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