MODULATION BEHAVIOR OF SEMICONDUCTOR INJECTION-LASERS

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5

[3] ANGERSTEIN J, 1976, AEU-INT J ELECTRON C, V30, P477

[4] ARNOLD G, TO BE PUBLISHED

[5] BASOV NG, 1968, SOV PHYS SEMICOND+, V1, P1305

[6] DYNAMICS OF INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) : 855 - +

[7] BISWAS SN, 1973, INDIAN J PURE AP PHY, V11, P855

[8] SINGLE-MODE TRANSMISSION-SYSTEMS FOR CIVIL TELECOMMUNICATION [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1976, 123 (06): : 627 - 632

[9] BOERNER M, 1971, WISS BER AEG TELEFUN, V44, P41

[10] DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS [J]. ELECTRONICS LETTERS, 1975, 11 (10) : 206 - 208

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5

[3] ANGERSTEIN J, 1976, AEU-INT J ELECTRON C, V30, P477

[4] ARNOLD G, TO BE PUBLISHED

[5] BASOV NG, 1968, SOV PHYS SEMICOND+, V1, P1305

[6] DYNAMICS OF INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) : 855 - +

[7] BISWAS SN, 1973, INDIAN J PURE AP PHY, V11, P855

[8] SINGLE-MODE TRANSMISSION-SYSTEMS FOR CIVIL TELECOMMUNICATION [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1976, 123 (06): : 627 - 632

[9] BOERNER M, 1971, WISS BER AEG TELEFUN, V44, P41

[10] DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS [J]. ELECTRONICS LETTERS, 1975, 11 (10) : 206 - 208