THRESHOLD REDUCTION IN PB1-X SNX TE LASER-DIODES THROUGH USE OF DOUBLE HETEROJUNCTION GEOMETRIES

被引：30

作者：

TOMASETTA, LR ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT, DEPT ELECTR ENGN, CAMBRIDGE, MA 02139 USA

来源：

关键词：

D O I：

10.1063/1.1655540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：440 / 442

页数：3

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