THALLIUM AND INDIUM DOPED PB1-XSNXTE BY LIQUID-PHASE EPITAXY

被引:12
作者
TOMASETTA, LR [1 ]
FONSTAD, CG [1 ]
机构
[1] MIT, CTR MAT SCI & ENGN, DEPT ELECT ENGN, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1016/0025-5408(74)90115-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:799 / 802
页数:4
相关论文
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JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&
[3]   LEAD-TIN TELLURIDE HETEROSTRUCTURES AND LASER-DIODES BY LIQUID-PHASE EPITAXY [J].
TOMASETT.LR ;
FONSTAD, CG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) :1176-1176
[4]  
TOMASETTA LR, 1974, APPL PHYS LETT, V24