ANOMALOUS TEMPERATURE-DEPENDENCE OF LATTICE-CONSTANT IN SILICON-CRYSTALS

被引:8
作者
SUZUKI, Y
HOSOGI, S
SAKASHITA, H
OHAMA, N
OKAZAKI, A
机构
[1] Department of Physics, Kyushu University
关键词
D O I
10.1143/JPSJ.46.1037
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The lattice constant of silicon single-crystals grown with the floating-zone and the Czochralski methods have been measured as a function of temperature by means of a high-angle double-crystal X-ray diffractometer with a relative accuracy of 1 part in 107. Anomalous temperature dependence and anomalous increase in Bragg peak widths are observed around 200 K only when the measurement is made with lowering temperature. The anomaly diminishes when thermal cycles between 300 and 100 K are repeated, though it is still appreciable at the third cycle. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
引用
收藏
页码:1037 / 1038
页数:2
相关论文
共 3 条
[1]   LINEAR THERMAL-EXPANSION MEASUREMENTS ON SILICON FROM 6 TO 340 K [J].
LYON, KG ;
SALINGER, GL ;
SWENSON, CA ;
WHITE, GK .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :865-868
[2]  
OHAMA N, UNPUBLISHED
[3]  
OKAZAKI A, UNPUBLISHED