HIGH-PERFORMANCE 0.10-MU-M CMOS DEVICES OPERATING AT ROOM-TEMPERATURE

The authors, have fabricated 0.10-mum gate-length CMOS devices that operate with high speed at room temperature. Electron-beam lithography was used to define 0.10-mum polysilicon gate patterns. Surface-channel type p- and n-channel MOSFET's were fabricated using an LDD structure combined with a self-aligned TiSi2 process. Channel doping was optimized so as to suppress punchthrough as well as to realize high transconductance and low drain junction capacitance. The fabricated 0.10-mum CMOS devices have exhibited high transconductance as well as a well-suppressed band-to-band tunneling current, although the short-channel effect occurred somewhat. The operation of a 0.10-mum gate-length CMOS ring oscillator has been demonstrated for the first time. The operation speed was 27.7 ps / gate at 2.5 V at room temperature, which is the fastest CMOS switching ever reported.