STOICHIOMETRIC AND STRUCTURAL ORIGIN OF ELECTRONIC STATES AT THE PD2SI-SI INTERFACE

被引：88

作者：

HO, PS

SCHMID, PE

FOLL, H

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.46.782

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：782 / 785

页数：4

共 11 条

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[5] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE
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[7] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION
HO, PS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124
[8] MORUZZI VL, COMMUNICATION
[9] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324
[10] SCHMID PE, UNPUBLISHED