CHEMICAL AND STRUCTURAL CHARACTERIZATIONS OF CHEMICAL VAPOR-DEPOSITED SIXC1-X FILMS

被引：9

作者：

AGULLO, JM ^{[1
]}

MAURY, F ^{[1
]}

MORANCHO, R ^{[1
]}

CARLES, R ^{[1
]}

机构：

[1] UNIV TOULOUSE 3,PHYS SOLIDES LAB,CNRS,URA 74,F-31062 TOULOUSE,FRANCE

来源：

MATERIALS LETTERS | 1991年 / 11卷 / 8-9期

关键词：

D O I：

10.1016/0167-577X(91)90197-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon-rich Si(x)C1-x (0 < x < 0.5) ceramic films were prepared at moderate temperature by chemical vapour deposition using an organosilane (tetraethylsilane) and a carbon source (cumene). A microstructural characterization of these Si(x)C1-x films is reported and a multiphase model is proposed from the chemical and structural analysis carried out by XPS, Raman spectroscopy and selected area electron diffraction.

引用

页码：257 / 260

页数：4

共 10 条

[1]

AGULLO JM, IN PRESS

[2]

AGULLO JM, UNPUB

[3]

DRESSELHAUS MS, 1982, TOP APPL PHYS, V51, P3

[4]

GAUTHIER JP, 1983, J MICROSC SPECT ELEC, V8, P301

[5]

HAHN T, 1987, INT TABLES XRAY CRYS, VA

[6] RAMAN-SPECTRA OF AMORPHOUS SIC [J].

INOUE, Y ;

NAKASHIMA, S ;

MITSUISHI, A ;

TABATA, S ;

TSUBOI, S .

SOLID STATE COMMUNICATIONS, 1983, 48 (12) :1071-1075

[7]

Klug H. P., 1962, XRAY DIFFRACTION PRO, P491

[8]

NASLAIN R, 1990, 1ST P INT C FUNCT GR, P71

[9] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF SI-C FILM GROWTH BY CHEMICAL VAPOR-DEPOSITION OF ETHYLENE ON SI(100) [J].

TAYLOR, PA ;

BOZACK, M ;

CHOYKE, WJ ;

YATES, JT .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1099-1105

[10]

WEAST RC, 1974, HDB CHEM PHYSICS

← 1 →