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EFFECT OF HEAT-TREATMENT ON AL-GAAS SCHOTTKY BARRIERS
被引:7
作者
:
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
WADA, O
[
1
]
YANAGISAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
YANAGISAWA, S
[
1
]
TAKANASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
TAKANASHI, H
[
1
]
机构
:
[1]
FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1973年
/ 12卷
/ 11期
关键词
:
D O I
:
10.1143/JJAP.12.1814
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1814 / 1815
页数:2
相关论文
共 6 条
[1]
GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER
COWLEY, M
论文数:
0
引用数:
0
h-index:
0
COWLEY, M
HEFFNER, H
论文数:
0
引用数:
0
h-index:
0
HEFFNER, H
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(01)
: 255
-
&
[2]
CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
: 1035
-
&
[3]
ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
HACKAM, R
论文数:
0
引用数:
0
h-index:
0
HACKAM, R
HARROP, P
论文数:
0
引用数:
0
h-index:
0
HARROP, P
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(12)
: 1231
-
+
[4]
ELECTRICAL PROPERTIES OF METAL-GAAS SCHOTTKY BARRIER CONTACTS
OHURA, JI
论文数:
0
引用数:
0
h-index:
0
OHURA, JI
TAKEISHI, Y
论文数:
0
引用数:
0
h-index:
0
TAKEISHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1970,
9
(05)
: 458
-
+
[5]
EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES
SMITH, BL
论文数:
0
引用数:
0
h-index:
0
SMITH, BL
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(04)
: 502
-
&
[6]
NEAR IDEAL AU-GAP SCHOTTKY DIODES
SMITH, BL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Manchester, Manchester
SMITH, BL
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4675
-
&
←
1
→
共 6 条
[1]
GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER
COWLEY, M
论文数:
0
引用数:
0
h-index:
0
COWLEY, M
HEFFNER, H
论文数:
0
引用数:
0
h-index:
0
HEFFNER, H
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(01)
: 255
-
&
[2]
CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
: 1035
-
&
[3]
ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
HACKAM, R
论文数:
0
引用数:
0
h-index:
0
HACKAM, R
HARROP, P
论文数:
0
引用数:
0
h-index:
0
HARROP, P
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(12)
: 1231
-
+
[4]
ELECTRICAL PROPERTIES OF METAL-GAAS SCHOTTKY BARRIER CONTACTS
OHURA, JI
论文数:
0
引用数:
0
h-index:
0
OHURA, JI
TAKEISHI, Y
论文数:
0
引用数:
0
h-index:
0
TAKEISHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1970,
9
(05)
: 458
-
+
[5]
EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES
SMITH, BL
论文数:
0
引用数:
0
h-index:
0
SMITH, BL
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(04)
: 502
-
&
[6]
NEAR IDEAL AU-GAP SCHOTTKY DIODES
SMITH, BL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Manchester, Manchester
SMITH, BL
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4675
-
&
←
1
→