CARRIER RECOMBINATION STUDIES OF ZNCDSE/ZNSE SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引:23
作者
MASSA, JS
BULLER, GS
WALKER, AC
HORSBURGH, G
MULLINS, JT
PRIOR, KA
CAVENETT, BC
机构
[1] Department of Physics, Heriot-Watt University, Riccarton
关键词
D O I
10.1063/1.113196
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.© 1995 American Institute of Physics.
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页码:1346 / 1348
页数:3
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