DEEP AND FAST PLASMA-ETCHING FOR SILICON MICROMACHINING

被引：16

作者：

FRANCOU, M ^{[1
]}

DANEL, JS ^{[1
]}

PECCOUD, L ^{[1
]}

机构：

[1] CENG,DMEL,F-38054 GRENOBLE 9,FRANCE

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期

关键词：

PLASMA ETCHING; MICROMACHINING; SILICON;

D O I：

10.1016/0924-4247(94)00852-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of silicon anisotropic etching in SF6/Ar/O-2-based plasma has been performed in a surfatron reactor excited at 2.45 GHz with independent radio-frequency biasing at 13.56 MHz. Emphasis is put on the comparison of profiles and etch rates obtained with different percentages of oxygen added to the mixture as a function of substrate temperature. Good results are obtained with 15% O-2 and a substrate temperature of -30 degrees C, allowing a depth of 100 mu m to be etched.

引用

页码：17 / 21

页数：5

共 9 条

[1]

CHARLET B, 1987, ANTIBES FRANCE 0601, P183

[2] MICROSCOPIC UNIFORMITY IN PLASMA-ETCHING [J].

GOTTSCHO, RA ;

JURGENSEN, CW ;

VITKAVAGE, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05) :2133-2147

[3]

JONES HC, 1990, 8TH P S PLASM, P45

[4] FEATURE-SIZE DEPENDENCE OF ETCH RATE IN REACTIVE ION ETCHING [J].

LEE, YH ;

ZHOU, ZH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (08) :2439-2445

[5]

PARASZCZAK J, 1986, MICROELECTR ENG, V5, P363

[6] SIMULATION OF REACTIVE ION ETCHING PATTERN TRANSFER [J].

SHAQFEH, ESG ;

JURGENSEN, CW .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) :4664-4675

[7]

TTSJIMOT K, 1991, JPN J APPL PHYS, V30, P145

[8]

WANG HH, 1985, JUN P INT IEEE V MIC, P335

[9] REACTIVE ION ETCHING FOR SUB-MICRON STRUCTURES OF REFRACTORY-METAL SILICIDES AND POLYCIDES [J].

ZHANG, M ;

LI, JZ ;

ADESIDA, I ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1037-1042

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