GROWTH PROPERTIES OF GASB - STRUCTURE OF RESIDUAL ACCEPTOR CENTRES

被引：157

作者：

VANDERME.YJ

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / 28卷 / 01期

关键词：

D O I：

10.1016/0022-3697(67)90193-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：25 / &

相关论文

共 18 条

[1] ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB
BAXTER, RD
BATE, RT
REID, FJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) : 41 - &
[2] THE TEMPERATURE DISTRIBUTION IN PULLED GERMANIUM CRYSTALS DURING GROWTH
BRICE, JC
WHIFFIN, PAC
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 183 - 187
[3] DIKHOFF JAM, 1960, SOLIDST ELECTRON, V1, P93
[4] INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB
EFFER, D
ETTER, PJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (05) : 451 - &
[5] SELF-DIFFUSION IN INDIUM ANTIMONIDE AND GALLIUM ANTIMONIDE
EISEN, FH
BIRCHENALL, CE
[J]. ACTA METALLURGICA, 1957, 5 (05): : 265 - 274
[6] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS
FAUST, JW
JOHN, HF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1119 - &
[7] GOORISSEN J, 1959, Z METALLKD, V50, P46
[8] DISTRIBUTION COEFFICIENTS OF IMPURITIES IN GALLIUM ANTIMONIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 856 - &
[9] A COMPETITIVE ADSORPTION MODEL OF STEADY-STATE GROWTH OF A CRYSTAL FROM A LIGHTLY-DOPED MELT
HOLMES, PJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (11) : 1239 - &
[10] MERTEN U, 1963, J PHYS CHEM SOLIDS, V24, P1064