GROWTH PROPERTIES OF GASB - STRUCTURE OF RESIDUAL ACCEPTOR CENTRES

[11] OWENS EB, 1962, ULTRAPURIFICATION SE, P340

[12] ON THE THERMODYNAMIC PROPERTIES OF THE III-V COMPOUNDS INSB, GASB, AND INAS [J]. ACTA METALLURGICA, 1958, 6 (05): : 320 - 326

[13] DIFFUSION, SOLUBILITY, AND ELECTRICAL PROPERTIES OF COPPER IN INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1963, 130 (06): : 2160 - &

[14] STUDIES OF VACANCIES IN DISLOCATION-FREE GE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (12) : 2002 - 2010

[15] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[16] FACET EFFECT AND ELECTRICAL CONDUCTIVITY IN UNDOPED PULLED GASB CRYSTALS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 767 - 769

[17] PROPERTIES OF RESIDUAL ACCEPTORS IN GASB FROM REACTIONS WITH LI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (02) : 472 - +

[18] VANMAAREN MH, 1965, THESIS UTRECHT

[11] OWENS EB, 1962, ULTRAPURIFICATION SE, P340

[12] ON THE THERMODYNAMIC PROPERTIES OF THE III-V COMPOUNDS INSB, GASB, AND INAS [J]. ACTA METALLURGICA, 1958, 6 (05): : 320 - 326

[13] DIFFUSION, SOLUBILITY, AND ELECTRICAL PROPERTIES OF COPPER IN INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1963, 130 (06): : 2160 - &

[14] STUDIES OF VACANCIES IN DISLOCATION-FREE GE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (12) : 2002 - 2010

[15] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[16] FACET EFFECT AND ELECTRICAL CONDUCTIVITY IN UNDOPED PULLED GASB CRYSTALS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 767 - 769

[17] PROPERTIES OF RESIDUAL ACCEPTORS IN GASB FROM REACTIONS WITH LI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (02) : 472 - +

[18] VANMAAREN MH, 1965, THESIS UTRECHT