ANALYSIS OF TRANSPORT PROCESSES IN VERTICAL CYLINDER EPITAXY REACTORS

[1] [Anonymous], 1966, PROPERTIES GASES LIQ

[2] AN ITERATIVE METHOD FOR THE SOLUTION OF EIGENVALUE PROBLEMS [J]. JOURNAL OF APPLIED PHYSICS, 1952, 23 (02) : 195 - 198

[3] Bird R.B., 2006, TRANSPORT PHENOMENA

[4] HEAT OR MASS TRANSFER IN A FLUID IN LAMINAR FLOW IN A CIRCULAR OR FLAT CONDUIT [J]. AICHE JOURNAL, 1960, 6 (02) : 179 - 183

[5] EFFECTS OF NATURAL AND FORCED CONVECTION IN VAPOR-PHASE GROWTH SYSTEMS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 128 - +

[6] DITTMAN FW, 1974, ADV CHEM SER, P463

[7] EVERSTEIJN FC, 1970, PHILIPS RES REP, V25, P472

[8] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[9] QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1106 - &

[10] Graetz L., 1885, ANN PHYS CHEM, V25, P337, DOI DOI 10.1002/ANDP.18852610702

[1] [Anonymous], 1966, PROPERTIES GASES LIQ

[2] AN ITERATIVE METHOD FOR THE SOLUTION OF EIGENVALUE PROBLEMS [J]. JOURNAL OF APPLIED PHYSICS, 1952, 23 (02) : 195 - 198

[3] Bird R.B., 2006, TRANSPORT PHENOMENA

[4] HEAT OR MASS TRANSFER IN A FLUID IN LAMINAR FLOW IN A CIRCULAR OR FLAT CONDUIT [J]. AICHE JOURNAL, 1960, 6 (02) : 179 - 183

[5] EFFECTS OF NATURAL AND FORCED CONVECTION IN VAPOR-PHASE GROWTH SYSTEMS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 128 - +

[6] DITTMAN FW, 1974, ADV CHEM SER, P463

[7] EVERSTEIJN FC, 1970, PHILIPS RES REP, V25, P472

[8] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[9] QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1106 - &

[10] Graetz L., 1885, ANN PHYS CHEM, V25, P337, DOI DOI 10.1002/ANDP.18852610702