LUMINESCENCE PROPERTIES OF ZNS/GAAS GROWN BY GAS SOURCE MBE

被引：16

作者：

KANEHISA, O

SHIIKI, M

MIGITA, M

YAMAMOTO, H

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

BAND EDGE EMISSION - SELF-ACTIVATED EMISSION;

D O I：

10.1016/0022-0248(90)90744-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：367 / 371

页数：5

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[10] NEW AND SIMPLE MOCVD TECHNIQUE USING COMPLETELY GASEOUS MO-SOURCES ESPECIALLY USEFUL FOR GROWING ZN-CHALCOGENIDE FILMS [J].

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