ION CHANNELING STUDY OF HYDROGENATION INDUCED DAMAGE IN CUINSE2 CRYSTALS

Ion beam channeling has been used to investigate the lattice damage of CuInSe2 single crystals after hydrogenation by 10 keV proton implantation and by diffusion from a hydrogen plasma source. Data is presented showing radiation annealing of defects in proton implanted crystals up to some critical fluence and buildup of radiation damage with increasing fluence above this critical fluence. Plasma hydrogenation gives rise to near surface damage at low power densities and to the formation of extended defects at high power densities.