REAL-TIME ELECTRON-CYCLOTRON OSCILLATIONS OBSERVED BY TERAHERTZ TECHNIQUES IN SEMICONDUCTOR HETEROSTRUCTURES

被引：33

作者：

SOME, D ^{[1
]}

NURMIKKO, AV ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 26期

关键词：

D O I：

10.1063/1.112397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the application of optoelectronically generated terahertz electromagnetic transients to real-time detection of coherent oscillations by free electrons in modulation doped semiconductor heterostructures, due to the cyclotron resonance. The damping of these oscillations gives a direct measure of the electron dephasing which can be compared with scattering rates obtained from dc transport measurements. © 1994 American Institute of Physics.

引用

页码：3377 / 3379

页数：3

共 12 条

[1] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[2] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[3] THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) : 989 - 997
[4] MAGNETOPLASMA EFFECTS IN A QUASI-3-DIMENSIONAL ELECTRON-GAS
KARRAI, K
DREW, HD
LEE, MW
SHAYEGAN, M
[J]. PHYSICAL REVIEW B, 1989, 39 (02) : 1426 - 1429
[5] STUDY OF THE SINGLE-PARTICLE AND TRANSPORT LIFETIMES IN GAAS/ALXGA1-XAS
MANI, RG
ANDERSON, JR
[J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4299 - 4302
[6] THE MAGNETOPHONON EFFECT
NICHOLAS, RJ
[J]. PROGRESS IN QUANTUM ELECTRONICS, 1985, 10 (01) : 1 - 75
[7] SCLESINGER Z, 1983, PHYS REV LETT, V50, P2098
[8] CYCLOTRON-RESONANCE LINEWIDTH OSCILLATIONS IN THE INTEGER AND FRACTIONAL QUANTUM HALL REGIMES
SEIDENBUSCH, W
GORNIK, E
WEIMANN, G
[J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9155 - 9159
[9] CYCLOTRON-RESONANCE STUDY OF POLARONS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES
SEIDENBUSCH, W
[J]. PHYSICAL REVIEW B, 1987, 36 (04): : 1877 - 1884
[10] THEORY OF CYCLOTRON-RESONANCE OF INTERACTING ELECTRONS IN A SEMICONDUCTING SURFACE INVERSION LAYER
TING, CS
YING, SC
QUINN, JJ
[J]. PHYSICAL REVIEW B, 1977, 16 (12): : 5394 - 5404

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