REACTION-ENGINEERING MODELING OF LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF NB2O5 THIN-FILM

被引：14

作者：

JUNG, SC

IMAISHI, N

PARK, HC

机构：

[1] KYUSHU UNIV,INTERDISCIPLINARY GRAD SCH ENGN SCI,KASUGA,FUKUOKA 816,JAPAN

[2] CHONNAM NATL UNIV,DEPT CHEM TECHNOL,KWANGJU,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6B期

关键词：

NB2O5; THIN FILM; LPMOCVD; NUMERICAL SIMULATION; GAS-PHASE REACTION; SURFACE REACTION;

D O I：

10.1143/JJAP.34.L775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of niobium oxide (V) were prepared by low-pressure metalorganic chemical vapor deposition (LPMOCVD) from bis-dipivaloylmethanate niobium trichloride in a horizontal tube hot-wall reactor. The dependence of growth rate, crystal orientation, morphology and chemical composition on operating conditions were studied experimentally. The profile of the thin film grown on microscale trenches and the macroscopic growth rate distribution in the reactor were studied by micro/macro-numerical simulations.

引用

页码：L775 / L778

页数：4

共 12 条

[1] REACTION ANALYSIS FOR ZRO2 AND Y2O3 THIN-FILM GROWTH BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING BETA-DIKETONATE COMPLEXES [J].