SURFACE-REACTION RATE DURING ZRO2 THIN-FILM FORMATION BY MOCVD - STEP COVERAGE ON MICRO-TRENCHES

ZrO2 thin film was prepared by low-pressure MOCVD on silicon substrate in which micro-trenches are grooved. The step coverage was measured by SEM. Zr (C11 H19O2)4 was used as a source compound. Experimental pressure and temperature ranged from 0.4kPa-4kPa and 823K-1023 K respectively. A simple Monte Carlo simulation code was developed and successfully used to explain the experimentally obtained step coverage. The sticking coefficient of the filmmaking species was determined by simulation via deposition profile fitting. The sticking coefficient and/or the reaction constant is independent of total pressure. The surface reaction rate constants at 823 K-1023 K are determined. The Arrhenius plot gives two activation energy values, 188kJ/mol for T < 900K and 38kJ/mol for T > 900 K.