CHARACTERISTICS OF GROWTH OF FILMS OF ZIRCONIUM AND HAFNIUM OXIDES (ZRO2, HFO2) BY THERMAL-DECOMPOSITION OF ZIRCONIUM AND HAFNIUM BETA-DIKETONATE COMPLEXES IN THE PRESENCE AND ABSENCE OF OXYGEN

被引：88

作者：

BALOG, M ^{[1
]}

SCHIEBER, M ^{[1
]}

MICHMAN, M ^{[1
]}

PATAI, S ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,DEPT ORGAN CHEM,JERUSALEM 91000,ISRAEL

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 07期

关键词：

oxygen effect; thin films; trifluoroacetylacetonate;

D O I：

10.1149/1.2129243

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The preparation of thin films of zirconium oxide and hafnium oxide by decomposition of the diketonate complexes of these metals has been described in two earlier papers. The present paper deals with aspects of film growth. The rate of film growth (R) depends on the substrate temperature but as the temperature increases, powdery oxide forms rather than continuous film. R depends on the concentration of the diketonate in the gas phase only at low values of concentrations and is constant at higher concentrations. The optimal conditions for ZrO2 and HfO2 film deposition from organometallic compounds and the influence of oxygen on R are discussed. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1203 / 1207

页数：5

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