NANOLITHOGRAPHIC PATTERNING OF AU FILMS WITH A SCANNING TUNNELING MICROSCOPE

被引:7
作者
VANHAESENDONCK, C
STOCKMAN, L
NEUTTIENS, G
STRUNK, C
BRUYNSERAEDE, Y
机构
[1] Katholieke Universiteit Leuven, Leuven
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期
关键词
D O I
10.1116/1.587840
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a new lithographic technique with a scanning tunneling microscope (STM), allowing us to pattern thin evaporated Au films at the nanometer scale. The electron beam produced by the STM tip is used to expose a very thin layer of ω-tricosenoic acid. Only four monolayers of the acid, which acts as an electron sensitive, negative resist, are deposited on top of the Au films using the Langmuir-Blodgett technique. We have verified the influence of the exposure conditions on the quality of the fabricated fine-line structures with a linewidth down to 15 nm. We can also measure the electrical properties of narrow Au lines which interconnect large predefined contact pads. As expected, the low-temperature magnetoresistance is strongly influenced by quantum interference effects.
引用
收藏
页码:1290 / 1293
页数:4
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