DETERMINATION OF LANDAU-LEVEL LIFETIMES IN N-GAAS

被引：10

作者：

BLUYSSEN, HJA

MAAN, JC

WYDER, P

机构：

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 07期

关键词：

D O I：

10.1016/0038-1098(79)90440-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lifetime of electrons in the first excited Landau level of n-GaAs is determined from a combination of measurements of far infrared cyclotron resonance induced absorption and conductivity change. Values of T1 of the order of 10-8s for densities of excited electrons of 1011 cm-3 and a temperature dependence of T-2.7 are found. An upper limit for the N = 0 Landau level to donor recombination time of the order of 10-9s was derived from pulsed conductivity measurements. © 1979.

引用

页码：465 / 468

页数：4

共 9 条

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[2]

BLUYSSEN HJA, UNPUBLISHED

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APPLIED PHYSICS LETTERS, 1968, 13 (03) :83-+

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